射频磁控溅射制备铝酸锶长余辉发光薄膜

Long-persistent luminescence of strontium aluminate thin films fabricated by radio frequency magnetron sputtering

摘要:

采用射频磁控溅射法在Si（100）衬底上制备稀土掺杂铝酸锶薄膜，在900℃和1100℃下、弱还原气氛中退火，分别得到SrAl2 O4∶Eu2＋，Dy3＋和Sr4 Al14 O25∶Eu2＋，Dy3＋长余辉发光薄膜。结果表明：SrAl2 O4结构是形成Sr4 Al14 O25相结构的中间相；在360 nm激发光激发下，SrAl2 O4∶Eu2＋，Dy3＋薄膜发光峰位于517 nm处左右，发光强度相对略高于Sr4 Al14 O25∶Eu2＋，Dy3＋薄膜，且后者发光峰位于490 nm处左右；Sr4 Al14 O25∶Eu2＋，Dy3＋薄膜的余辉性能优于SrAl2 O4∶Eu2＋，Dy3＋薄膜。

Abstract:

Rare earth ions doped long persistent films were grown on (100)-oriented Si substrates by the radio frequency magnetron sputtering .SrAl2 O4 :Eu2+ ,Dy3+ and Sr4 Al14 O25 :Eu2+ ,Dy3+ long persistent films were obtained by annealing the films in weak reducing atmosphere under 900 ℃ and 1100 ℃ ,respec-tively .The results show that SrAl2O4 was considered as the intermediate phase during the growth process of Sr4 Al14 O25 phase;Under 360nm excited ,SrAl2 O4 :Eu2+ ,Dy3+ film exhibited a broad yellow-green emis-sion band peaking at 517nm while Sr4 Al14 O25 :Eu2+ ,Dy3+ film showed blue-green emission band peaking at 490nm ,and the intensity of former one is higher than the latter one .The Sr4 Al14 O25 :Eu2+ ,Dy3+ film showed better afterglow characteristics than the SrAl2 O4 :Eu2+ ,Dy3+ film .