烧结温度对掺杂CZTSe靶材性能的影响

The influence of sintering temperature on the properties of CZTSe target material with doping RbF

摘要:

采用真空烧结技术制备了RbF∶CuZnSnSe（Rb-CZTSe）的陶瓷靶材，当RbF掺杂量为0.4%（质量分数）时，研究了不同烧结温度对CZTSe陶瓷靶材微观结构、致密度、电阻率及断面形貌的影响．结果表明，当烧结温度在660℃下所制备的陶瓷靶材表现出最优的各项性能，其电阻率188KΩ·cm和相对密度为94.68%．表明此方法所制备的Rb-CZTSe陶瓷靶材能更好的应用于工业生产．

Abstract:

The RbF∶CZTSe（Rb-CuZnSnSe）ceramic targets were prepared by vacuum sintering process. The effect of sintering temperatures on the crystal structure, density, electrical properties and densification behavior of the Rb-CZTSe ceramic targets with doping amount of 0.4%RbF were investigated. The results show that when the sintering temperature is 600 ℃, the ceramic targets exhibits the best properties, with a resistivity of 188KΩ·cm and a relative density of 94.68%. It shows that the Rb-CZTSe ceramic target prepared by this method can be better used in industrial production.