磁控溅射制备铝、钛掺杂钽氮化合物薄膜的微观结构与电学性能研究

Preparation Process of Al and Ti Doped Tantalum Nitride Films by Magnetron Sputtering

摘要:

采用反应射频磁控溅射法，在Al₂O₃陶瓷基片上通过共溅射的方式成功制备了Al-TaN和Ti-TaN薄膜，并通过调节Al和Ti靶的溅射功率以实现了掺杂，研究了掺杂元素变化对薄膜微观结构和电学性能的影响。结果显示，随着掺杂元素Al和Ti的增加，TaN薄膜的粗糙度逐渐增大，晶体结构逐渐向非晶转变；Al元素掺杂时，当Al靶掺杂功率由0 W升至70 W，薄膜电阻率由0.88 mΩ?cm增至82.72 mΩ?cm；Ti元素掺杂时，当Ti靶掺杂功率由0 W升至70 W，电阻率由1.03 mΩ?cm降至0.32 mΩ?cm。此时，随着Al和Ti靶材掺杂功率由0 W升至70 W，薄膜的TCR值分别从-1 313×10^-6 ℃^-1逐渐负偏至-3 831×10^-6 ℃^-1和从-1 322×10^-6 ℃^-1正偏至-404×10^-6 ℃^-1。该研究为溅射制备掺杂TaN薄膜提供了深刻的理论和实验基础。

Abstract:

In this study， Al-TaN and Ti-TaN films were successfully prepared on Al₂O₃ ceramic substrates using reactive RF magnetron sputtering through co-sputtering. The impacts of doping elements on the microstructure and electrical properties of the films were investigated by adjusting the sputtering power of Al and Ti targets. With the increase of Al and Ti doping， the surface roughness of TaN films gradually increases， and the crystalline structure transforms to amorphous. For Al doping， as the Al target sputtering power increases from 0 W to 70 W， the film resistivity increases from 0.88 mΩ?cm to 82.72 mΩ?cm. For Ti doping， as the Ti target sputtering power increases from 0 W to 70 W， the resistivity decreases from 1.03 mΩ?cm to 0.32 mΩ?cm. Additionally， the temperature coefficient of resistance （TCR） of the film gradually increases from -1 313×10^-6 ℃^-1 to -3 831×10^-6 ℃^-1. Similarly， when Ti target sputtering power increases from 0 W to 70 W， the TCR shifts from -1 322×10^-6 ℃^-1 to -404×10^-6 ℃^-1. This study provides a comprehensive theoretical and experimental foundation for sputtering-doped TaN film preparation.