掺硼浓度对金刚石薄膜微电极电化学氢化的影响

Effect of Boron Doping Concentration on Electrochemical Hydrogenation of Diamond Thin Film Microelectrodes

摘要:

硼掺杂金刚石（BDD）具有高的析氧电位、低的背景电流等优异的电化学性能，但其电化学传感特性易受掺硼浓度影响。采用热丝化学气相沉积法在微细钨丝上沉积BDD薄膜，在不同沉积温度（700和800 ℃）下改变掺硼浓度而制备了系列BDD微电极，研究了掺硼浓度对BDD微电极表面电化学氢化的影响。同时，采用扫描电子显微镜、Raman光谱分析薄膜形貌和成分，采用循环伏安法在铁氰化钾溶液中检测薄膜的表面状态和电化学性能。结果表明：高温会促进薄膜中硼的掺入，降低了薄膜质量；随着薄膜中硼浓度的增加，原生BDD电极的表面状态和电化学性能改变不大，但是会降低BDD微电极从氧端基恢复到氢端基的难度。

Abstract:

Boron doped diamond （BDD） has excellent electrochemical properties such as high oxygen evolution potential and low background current， and its electrochemical sensing characteristics are easily affected by the boron doping concentration. In this paper， a series of BDD microelectrodes deposited on tungsten wire were prepared by using hot filament chemical vapor deposition method. The boron concentration was changed at different deposition temperatures （700 ℃ and 800 ℃）， and the effect of boron doping concentration on electrochemical hydrogenation of BDD microelectrodes was mainly studied. Scanning electron microscopy and raman spectroscopy were used to analyze the morphology and composition of BDD films， and cyclic voltammetry was used to detect the surface state and electrochemical performance of BDD films in potassium ferricyanide solution. The results shows that high temperature promotes the doping of boron in the films and reduces the quality of the films. With the increase of boron concentration in the films， the surface state and electrochemical performance of the primary BDD electrodes do not change much， but they will reduce the difficulty of recovering from oxygen to hydrogen terminal group of BDD microelectrode.