低反射MXene基电磁屏蔽材料的研究进展

Research Progress of MXene-Based Electromagnetic Interference Shielding Materials with Low Reflectivity

摘要:

随着通信技术和移动电子设备的不断发展，电磁干扰问题变得日益严重，因此开发高性能的电磁屏蔽材料成为了重要的研究方向。二维过渡金属碳（氮）化物（MXenes）因具有导电性高、介电常数大等优点而被广泛应用于电磁屏蔽的研究。然而，高导电性表面会导致电磁波的反射，从而造成严重的电磁波二次污染，因此研究开发低反射的MXene基电磁屏蔽材料变得非常重要。对MXene的结构特点和制备方法进行了总结，详细阐述了低反射的Ti₃C₂T_x薄膜和气凝胶电磁屏蔽材料的研究进展，展望了MXene基电磁屏蔽材料的未来研究方向和发展趋势。

Abstract:

The development of communication technology and mobile electronic devices has resulted in increasingly severe electromagnetic interference （EMI） problems， highlighting the need for high-performance EMI shielding materials. Two-dimensional transition metal carbides or nitrides （MXenes） are widely used as EMI shielding materials due to their high electrical conductivity and large dielectric constant. However， the high-conductivity of MXenes can lead to strong reflection of incident electromagnetic waves， causing serious secondary pollution. Therefore， developing MXene-based EMI shielding materials with low reflectivity is of utmost importance. In this review， we summarize the structural characteristics and preparation methods of MXene. We also detail the research progress made with Ti₃C₂T_x film and aerogel EMI shielding materials with low reflectivity. Lastly， prospects for the development of MXene-based EMI shielding materials are discussed.