表面终端金刚石场效应晶体管的研究进展

Research Progress of Surface Terminal Diamond Field Effect Transistors

摘要:

金刚石因具有极高热导率、5.5 eV宽带隙、极高击穿电场、高固有载流子迁移率和低介电常数等优异性能，在高功率、高频、高温及低功率损耗电子器件领域中成为有力的竞争者。然而，研究人员对金刚石半导体掺杂技术进行了几十年的探索和优化，却仍然无法满足当前电子器件的应用需求。最近，随着H终端金刚石表面二维空穴气的发现，研究重心逐渐转向优化H终端金刚石的导电特性及制备场效应晶体管(Field Effect Transistor, FET)。综述了H终端金刚石研究的发展历程，从栅层材料选择、表面终端处理、金刚石掺杂和FET结构优化出发，归纳了提升表面终端金刚石FET器件性能的方法，并对表面终端金刚石FET的发展前景进行了总结和展望。

Abstract:

Diamond has become a strong competitor in the field of high power， high frequency， high temperature， and low power loss electronic devices， due to its high thermal conductivity， 5.5 eV wide-bandgap， high breakdown electric field， high intrinsic carrier mobility， and low dielectric constant. However， after decades of exploration and optimization of diamond semiconductor doping technology， it still cannot meet the application requirements of electronic devices. Recently， with the discovery of two-dimensional hole gas on the surface of H-terminated diamond， the focus of research has gradually shifted to optimizing the conductivity of H-terminated diamond and preparing field effect transistors （Field Effect Transistor， FET）. This paper reviews the development history of H-terminated diamond research， and summarizes the methods to improve the performance of surface terminal diamond FET devices based on the gate material selection， surface terminal treatment， diamond doping， and FET structure optimization. Finally， the development status and prospect of surface-terminated diamond FET were concluded.