In3+掺杂显著提高碳基CsPbI2Br钙钛矿太阳能电池性能

In3+ Doping Significantly Improves the Performance of Carbon-Based CsPbI2Br Perovskite Solar Cell

摘要:

碳基全无机CsPbI₂Br钙钛矿太阳能电池具有成本低、器件结构简单、稳定性好等优点，是一种很有前景的光伏电池。然而，其能量转换效率仍然过低，主要原因在于难以获得质量良好的CsPbI₂Br薄膜。为了获得质量良好的CsPbI₂Br薄膜，通过在CsPbI₂Br钙钛矿前驱体溶液中添加InI₃，将In³⁺掺杂到CsPbI₂Br晶体结构中以改善钙钛矿薄膜的质量。利用SEM和XRD对钙钛矿薄膜的微观形貌及晶体结构进行表征分析，并系统地测试了器件的光伏性能，包括开路电压、短路电流密度、填充因子、能量转换效率、外量子效率和积分电流密度。结果表明：In³⁺掺杂可调控CsPbI₂Br晶体的生长，通过提高其结晶性获得了致密、无孔洞的高质量钙钛矿薄膜；同时，通过调控InI₃的添加量，优化了In³⁺掺杂的比例，当InI₃添加量（质量分数）为0.5%时CsPbI₂Br钙钛矿太阳能电池的光伏性能提高更为显著，其器件能量转换效率从7.59%提高至11.16%，开路电压从1.04 V提高至1.22 V。

Abstract:

Carbon-based all-inorganic CsPbI₂Br perovskite solar cells （C-PSCs） have the advantages of low cost， simple device structure and good stability， and are a promising photovoltaic cell. However， its energy conversion efficiency is still too low， mainly because it is difficult obtain good quality CsPbI₂Br films. This paper investigated the possibility of doping In³⁺ into the CsPbI₂Br crystal structure to improve the quality of perovskite films by adding InI₃ to the CsPbI₂Br perovskite precursor solution. The microscopic morphology and crystal structure of the perovskite thin films were characterized by SEM and XRD， and the photovoltaic properties of the devices were systematically tested， including open-circuit voltage， short-circuit current density， fill factor， energy conversion efficiency， external quantum efficiency and integrated current density. The results show that： In³⁺ doping can control the growth of CsPbI₂Br crystals， and obtain dense， void-free high-quality perovskite films by improving its crystallinity； the photovoltaic performance of the 0.5% InI₃CsPbI₂Br perovskite solar cell was improved more significantly， the device energy conversion efficiency increased from 7.59% to 11.16%， and the open circuit voltage increased from 1.04 V to 1.22 V.