金属性MoO2纳米材料的制备及电阻的微区测量

Preparation of MoO2 nanomaterials with metallic properties and micro-area measurement of resistance

摘要:

为了研究MoO2的本征电阻率，采用化学气相沉积法（CVD）在蓝宝石衬底上制备金属性MoO2纳米材料，随后将材料转移到SiO2衬底制备成双端电阻器件，在进行电压?电流曲线测量的同时，采用开尔文探针力显微镜（KPFM）研究不同偏压下MoO2纳米材料表面电势的空间分布．结果表明：传统测量时忽略了接触电阻和热效应的影响，导致测量结果偏高；测量的MoO2的本征电阻率为6×10-5 Ω·cm，可以媲美高质量ITO薄膜电极．所以，MoO2作为一种廉价电极材料在电子器件中具有潜在的应用前景．

Abstract:

To study the intrinsic resistivity of MoO2， metallic MoO2 nanomaterials was prepared on the sapphire substrate by chemical vapor deposition （CVD）， and then the materials was transferred to the SiO2 substrate to prepare a two-terminal resistance device， and the spatial distribution of the surface potential of MoO2 nanomaterials under different bias voltages are investigated by Kelvin probe force microscopy （KPFM） while measuring the voltage-current curve. The results show that the traditional measurement ignores the influence of contact resistance and thermal effects， which overestimate the resistance of MoO2. The measured intrinsic resistivity of MoO2 is 6×10-5 Ω·cm， which iscomparable to high-quality ITO thin-film electrodes. Therefore， MoO2 is a promising cheap electrode material in electronic devices.