原子层沉积薄膜的表征方法进展

Progress in the characterization methods of atomic layer deposited films

摘要:

原子层沉积（ALD）是一种新兴的薄膜沉积技术，其最主要的优势在于可在高深宽比的结构上沉积均匀致密的纳米薄膜，因此在微电子、纳米科技等领域中具有广泛的应用．纳米厚度的ALD薄膜与传统微米厚度的薄膜材料相比，需要更精确的表征手段，因此对ALD薄膜的表征方法展开了针对性探讨．阐述了ALD薄膜的常用物性表征方法，主要从薄膜厚度、成分、结晶性及形貌等方面展开探讨，同时展望了其未来发展的方向．

Abstract:

Atomic layer deposition （ALD） is an emerging technology for thin film deposition. The major advantage of ALD is to conformally deposit uniform dense nano films on structures with a high aspect ratio， and therefore， ALD has a wide range of applications in microelectronics， nanotechnology， and so forth. Compared to conventional micrometer-thick films， nanometer-thick ALD films require more accurate characterization methods. Therefore， this paper discusses the characterization methods particularly for the ALD films. In this paper， common characterization methods for the ALD films are discussed mainly from the aspects of film thickness， composition， crystallinity， and morphology properties， and an outlook is also offered on the future directions of the characterization methods.